Pinned dynamic electro-optical phase shifter

ABSTRACT

A semiconductor electro-optical phase shifter may include a substrate, an optical waveguide segment ( 12 ) formed on the substrate, and first and second zones of opposite conductivity types configured to form a first bipolar junction perpendicular to the substrate. The phase shifter may also include a dynamic control structure configured to reverse bias the first junction and a static control structure configured to direct a quiescent current in the second zone, parallel to the first junction.

TECHNICAL FIELD

The invention relates to semiconductor optical modulators, inparticular, to electro-optical phase shifters used in such modulators.

BACKGROUND

FIG. 1 schematically shows an optical modulator according to theMach-Zehnder interferometer principle, commonly referred to as an MZImodulator. The modulator includes an optical waveguide receiving a powerPin, which is divided into two branches 12 a and 12 b at a point S. Thetwo branches come together again at a point J. Each branch carries halfof the original optical power.

Each branch comprises a static electro-optical phase shifter SPS (SPSaand SPSb) and a dynamic electro-optical phase shifter DPS (DPSa andDPSb). The static phase shifters SPS are used to define an initial phasedifference φ0 between the two optical waveguide branches. They arecontrolled by respective bias signals IBa and IBb. The dynamic phaseshifters DPS are used to perform a differential modulation around theinitial conditions defined by the SPS phase shifters. They arecontrolled by respective modulation signals M and M/ varying in phaseopposition.

The waves arriving on both branches of the modulator are added at pointJ. The resulting wave has a power of Pin·cos 2(Δφ/2), neglecting theoptical losses, where Δφ is the instantaneous phase difference betweenthe waves of the two branches.

FIG. 2 is a perspective view of the waveguide branches 12 a and 12 bincorporating phase shifters SPS and DPS, shown in gray. As shown, thewaveguides are formed in transparent islands of intrinsic semiconductormaterial, having an inverted “T” cross section with a central rib WGthat conveys the optical beam. The phase shifters are configured toreplace waveguide segments and have the same inverted “T” cross section.The edges of the phase-shifters bear electrical contacts for controllingthe phase-shifters—the edges generally rise above the plane of thewaveguides, as shown, to reach the device metal levels.

FIG. 3A is a schematic sectional view of a DPS phase shifter referred toas a High-Speed Phase Modulator (HSPM). The cross section plane isperpendicular to the axis of the optical waveguide. A dashed circle, atthe center of rib WG, represents the area of concentration of theoptical beam.

The phase shifter comprises a semiconductor structure of the same natureas that of the waveguide, generally silicon, forming a PN junction 14 ina plane parallel to the axis of the waveguide, and offset with respectto the axis. The junction 14 is shown, as an example, at the rightlateral face of the rib WG.

To the left of the junction 14 extends a P-doped zone that has a crosssection conforming to the cross section of the waveguide, comprising anelevated portion at the level of the rib WG, and a lower lateral wingtoward the left edge. Zone P ends at its left by a P+ doped raised area,bearing an anode contact A.

To the right of junction 14 extends an N-doped wing conforming to thecross section of the waveguide. The wing ends to the right by an N+doped raised area, bearing a cathode contact C. The structure of thephase shifter may be formed on an insulating substrate, for example aburied oxide layer BOX.

To control the phase shifter of FIG. 3, a voltage is applied between theanode and cathode contacts A, C, which reverse-biases the junction 14(the “plus” on the cathode and the “minus” on the anode). Thisconfiguration causes a displacement of electrons e from the N region tothe cathode and of holes h from the P region to the anode, and thecreation of a depletion region D in the vicinity of the junction 14. Byadjusting the amplitude of the bias voltage, the carrier concentrationcan thus be modified in the zone WG crossed by the optical beam, whichresults in a corresponding modification of the refractive index of thiszone.

FIG. 3B is a schematic cross section view of a PIN junction phaseshifter SPS. The central N and P-doped zones of the structure of FIG. 3Aare replaced by a single intrinsic semiconductor zone I, in practice azone having a floor P-doping level. To control this phase shifter, acurrent is applied between the anode and cathode contacts A, C, whichforward-biases the junction (the “minus” on the cathode and the “plus”on the anode). A current establishes between the anode and the cathodecausing the injection of carriers in the intrinsic zone I (holes h fromthe P+ region to zone I and electrons e from the N+ region to zone I).The carrier concentration, i.e. the refractive index, is thus changed asa function of the current in the area crossed by the optical beam.

PIN phase shifters provide a larger adjustment range per unit of lengththan HSPM phase shifters, but their response speed is 50 to 100 timesslower; that is why they are used in static mode to adjust the quiescentconditions of the modulator. HSPM shifters offer a small response rangeper unit of length. In practice a PIN phase shifter may introduce aphase delay of 90° over only 250 microns, while an HSPM phase shifterprovides a phase shift amplitude of about ten degrees per millimeter. Ifa phase shift amplitude of 30° is desired, the HSPM phase shifter spansnearly 3 mm. FIG. 2 thus illustrates the HSPM (DPS) phase shifters asbeing longer than the PIN phase shifters.

SUMMARY

A semiconductor electro-optical phase shifter, generally includes asubstrate, an optical waveguide segment formed on the substrate, andfirst and second zones of opposite conductivity types configured to forma first bipolar junction perpendicular to the substrate. Thesemiconductor electro-optical phase shifter also includes a dynamiccontrol structure configured to reverse bias the first junction and astatic control structure configured to direct a quiescent currentparallel to the junction in the second zone.

The phase shifter may comprise a third zone of same conductivity typethan the first zone, electrically coupled to the first zone, and formingwith the second zone a second bipolar junction parallel to the firstjunction. The phase shifter may comprise a fourth zone of sameconductivity type as the first zone, forming a third bipolar junctionperpendicular to the substrate and configured to be forward biased bythe static control structure. The first junction may be perpendicular tothe axis of the waveguide.

A phase shifter may comprise a plurality of phase shifter modules of theaforementioned type, arranged along a same waveguide, and sharing thecontrol structures.

A phase shifter may comprise a plurality of phase shifter modules of theaforementioned type, arranged along a same waveguide, and havingindividual control structures configured to produce phase differences ingeometric progression.

A method of phase shifting an optical wave may include the steps ofproviding an optical waveguide in a semiconductor material on asubstrate and forming in the waveguide a first bipolar junctionperpendicular to the substrate. The method may also include producing aquiescent current flowing parallel to the junction and reverse biasingthe junction by a modulation signal.

The method may comprise the steps of forming a second bipolar junctionparallel to the first junction, directing the quiescent current betweenthe first and second junctions, and reverse biasing the second junctionby the modulation signal. The method may comprise the steps of forming athird bipolar junction perpendicular to the substrate and directing thequiescent current through the third junction.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic diagram of an optical modulator configured as aMach-Zehnder interferometer (MZI) in accordance with the prior art.

FIG. 2 is a perspective view of two arms of the modulator of FIG. 1.

FIGS. 3A and 3B are schematic cross section views of two types of phaseshifters used in the modulator of FIG. 1 in accordance with the priorart.

FIGS. 4A and 4B are schematic diagrams of two embodiments of a pinnedphase shifter in accordance with the present invention.

FIG. 5 is a schematic diagram of another embodiment of a pinned phaseshifter in accordance with the present invention.

FIGS. 6A and 6B are schematic diagrams of two implementation examples ofpinned phase shifters of the type of FIG. 4A in an optical waveguide.

FIG. 7 is a schematic diagram of an exemplary “multi-level” phaseshifter achievable with pinned phase shifters in accordance with anembodiment of the present invention.

DESCRIPTION OF EMBODIMENTS

To reduce the length of the dynamic phase shifters of an MZI modulator,phase shifters that can be qualified as “pinned” were explored. U.S.Pat. No. 7,711,212 describes such a phase shifter. The phase shifter isbased on a segment of a rib waveguide of P conductivity type, integrallyor similar to a PIN diode with a wing of N conductivity type (FIG. 3B).A junction is formed on the upper face of the rib with a cap of Nconductivity type. A transverse quiescent current is established in thesegment. A voltage applied on the cap that reverses biases the junctioncreates a depletion region that “pinches” the area through which thetransverse current flows. If the voltage on the cap is high enough, thedepletion region may completely block the current flow. The waveguidesegment is thus used as a JFET transistor.

A pinned phase shifter of the type described in the aforementionedpatent is difficult to achieve in practice and does not offer optimalperformance. The depletion zone must in particular span the full heightof the rib before it starts to pinch the area crossed by the transversecurrent. The control voltage may then exceed the tolerances allowed byindustrial processes.

FIGS. 4A and 4B are schematic diagrams of two alternative embodiments ofa pinned phase shifter that are relatively straightforward toindustrialize, made from a waveguide segment 12. FIGS. 4A, 4B andfollowing are top views of the waveguide. The optical axis of thewaveguide is shown by a line OA. The shown structures are vertical, thatis to say perpendicular to the substrate on which the waveguide isformed, and may extend over the entire height of the waveguide.

In FIG. 4A, the phase shifter comprises a zone 40 of P conductivity typeextending from an edge of the waveguide 12 and stopping between theoptical axis OA and the opposite edge of the waveguide. The remainingportion toward the opposite edge is occupied by a zone 42 of Nconductivity type. The zones 40 and 42 form a PN junction that isdesigned to be forward biased by a voltage applied between a groundterminal GND, connected to the zone 42, and a bias terminal Vb connectedto the zone 40.

A restrained passage between the terminals Vb and GND is defined in thezone 40 between two transverse zones 44 and 45 of N conductivity type.The N-type zones 44 and 45 define two bipolar junctions with the P-typezone 40 and are connected to a common modulation terminal Vm.

In operation, the terminal Vb receives a constant voltage that defines aquiescent current flowing through the junction 40-42 to ground GND. Thephase modulation is performed by a signal applied to terminal Vm. Thissignal is designed to reverse bias the junctions 44-40 and 45-40, i.e.the voltage level on terminal Vm evolves above the level on terminal Vb.

Under these conditions, a depletion zone is formed, shown by dashedlines, around each of the junctions 44-40 and 45-40, all the wider thanthe level on terminal Vm is high. The two depletion zones pinch thecurrent path from both sides. This pinching increases the resistivity ofthe path, resulting in a decrease of the current, and therefore adecrease in the phase delay introduced by the phase shifter. If thevoltage level on terminal Vm is sufficiently high, the pinching may betotal, and the current cancels.

Voltage levels are provided by way of example in parentheses in FIG. 4Afor a gap between areas 44 and 45 of 1 to 2 microns, a length of thezones 44 and 45 of 0.5 to 1 micron, and a doping level of approximately10¹⁶ atoms per cm³ for the zone 40. The voltage level on terminal GNDbeing 0, the quiescent current establishes at about ten microampereswhen applying 1 V to terminal Vb. A modulation amplitude of 1.5 V,corresponding to a peak level of 2.5 V on terminal Vm, may be sufficientto cancel the quiescent current.

If the original modulation signal M is a binary voltage signalreferenced to ground GND, evolving between 0 and a positive level (e.g.1.5V), it may be applied in floating mode between the terminals Vb andVm, for example using a transformer, as shown. In the frequency rangeintended for signal M, of the order of several gigahertz, the primaryand secondary windings of the transformer may be simple conductor tracksconfigured in nested loops.

The depletion regions are shown with a constant width throughout thelength of the junctions. This would imply that the voltage level in zone40 remains constant over this length. In practice, the current pathbeing resistive, the voltage level is lower on the side of terminal GNDthan on the side of terminal Vb. This results in a tapered shape of thedepletion regions and a more pronounced pinch on the side of terminalGND.

The length of the zones 44 and 45 has little effect on pinching butdetermines the capacitance between terminals Vb and Vm. It is desirableto reduce the capacitance to improve the response speed of the phaseshifter. It is however desirable that the pinching occurs over theentire width of the optical wave to increase the sensitivity of thephase shifter. Thus, the length of the zones 44 and 45 is preferably ofthe order of the width of the optical wave.

The use of two parallel reverse biased junctions (44-40, 45-40) doublesthe sensitivity of the phase shifter due to the fact that the currentpath is pinched from both sides. It is possible to use only one junctionby replacing one of the zones 44, 45 by an insulating region. This wouldproduce the same operation, but the amplitude of the modulation signalmay need to be increased to achieve full pinching.

FIG. 4B is an alternative embodiment of the phase shifter of FIG. 4A.The phase shifter of FIG. 4A has been rotated by 90° about a verticalaxis so that the path of the quiescent current is set along the opticalaxis OA.

FIG. 5 shows another embodiment of a pinned phase shifter. Thisembodiment is similar to that of FIG. 4A, except that it lacks theN-type zone 42. In other words, the quiescent current is not establishedthrough a junction, but through a zone that is integrally P-doped, andbehaves in a purely resistive mode. The quiescent current is no longer adiffusion current, but a conduction current. A conduction current isless effective than a diffusion current in terms of phase shift per unitof current, meaning that the quiescent current may need to be greaterfor the same initial phase delay. However, this structure has noresponse lag after a full pinching. Indeed, once the current is canceledin the diode 40-42 of FIG. 4A, the reestablishment of a current isdelayed by the fact that the junction must first be charged.

A structure of the type of FIG. 4A may have a length of 250 microns andachieve a sensitivity of about 40°/mm. Thus, to achieve the typicallydesired amplitude of about 30° for a dynamic phase shifter, three“modules” of the type of FIG. 4A may be placed side by side in awaveguide. A length of about 800 microns is sufficient, compared to 3 mmoccupied by a conventional HSPM phase shifter.

FIG. 6A illustrates a first exemplary structure combining three pinnedphase shifter modules of the type of FIG. 4A. The P-type zones 40 of thethree modules are interconnected on the south side (the side of terminalGND). The N-type zone 42 is common to all three modules. The currentpaths of the three modules pass through gaps between four islands 61 to64 of N conductivity type. Each island comprises an arm extending towardthe north edge of the waveguide, where it is connected to terminal Vm,common to the three modules. The north part of the P-type zone 40 isthus separated by the arms in three distinct portions, associatedrespectively with the three modules. Each of these portions isconnected, at the north edge of the waveguide, to terminal Vb, common tothe three modules.

In the structure of FIG. 6A, a depletion region forms around each of theislands 61-64. It may be desirable, in order to reduce the capacitancebetween terminals Vb and Vm, to limit the depletion regions to the areaswhere they serve to pinch the current paths. In addition, the currentflowing out of the pinch paths may tend to distribute along the N-typezone 42. This may lead to diverging behaviors of the modules.

FIG. 6B illustrates another exemplary structure associating three phaseshifter modules, which ensures a homogeneous behavior of the modules.The P-type zones 40 of the modules are individualized on the south sideby insulating zones 66 that also separate the N-type zone 42 intoindividual portions.

Insulating zones 68 are also provided on the north side, along the armsof the islands 61 to 64. The insulating zones 66 and 68 thus constrainthe formation of the depletion regions to the locations where thepinching action is desired.

As shown, the islands may also include arms extending towards the southof the waveguide, through insulating zones 66. With this configuration,the terminal Vm and its tracks for contacting areas 61-64 may beprovided on either side of the waveguide.

A phase shifter as described so far is intended in principle to transmitthe two logic values 1 and 0 of a binary signal. The phase shifter isdesigned to switch abruptly between two phase delay values, for example0° and 30°, at the rate of the binary signal. (In practice, no phaseshifter is capable of introducing a zero phase delay—a phase delay is tobe considered as a differential value generated by an MZI modulator. Avalue of 0° corresponds to the case where each branch introduces thesame phase delay.)

FIG. 7 shows an exemplary “multilevel” phase shifter achievable frompinned phase shifters of the type of FIG. 4A. Such a phase shifter isdesigned to translate combinations of a multi-bit digital signal intodifferent phase shift levels. The shown example is adapted to athree-bit digital signal corresponding to eight phase shift levels.

The phase shifter includes three modules of the type of FIG. 4A,independently controllable and isolated from one another by a transversefloating strip 70 of P conductivity type. The structure of each moduleis similar to that of FIG. 4A. Each of the N-type islands or zones 44and 45 further comprises two arms extending toward the respective edgesof the waveguide. These arms are used to complete the isolation betweenthe modules with the P-type strips 70, creating two opposing junctionsbetween two adjacent modules.

The north arms of the islands 44 and 45 of a same module of rank i areconnected to a dedicated modulation terminal Vm_(i). Furthermore, thenorth part of the P-type zone 40 of a module of rank i is connected to adedicated bias terminal Vb_(i). Each N-type zone 42 may be set backrelative to the north arms of islands 44, 45, and the space between thezone 42 and the arms may be filled by P conductivity type portions ofzone 40. The zones 42 may be connected to ground GND.

In operation, the bias voltage applied to the terminal Vb₀ of the moduleof rank 0 is selected to establish a quiescent current I₀ introducing aphase delay of n/8, for example. The bias voltages Vb₁ and Vb₂ of themodules of ranks 1 and 2 are then chosen for establishing quiescentcurrents I1 and I2 introducing phase delays in geometrical progressionof factor 2, for example n/4 and n/2.

Three bits M[2:0] of a digital signal to be transmitted are representedby three binary signals M₀, M₁, M₂. Each binary signal M_(i) may beapplied between the terminals Vb_(i) and Vm_(i) of the correspondingmodule of rank i, for example by means of a respective transformer (asshown in FIG. 4A). The amplitude of the signal M_(i) is preferablyselected to obtain the cancellation of the quiescent current throughtotal pinching of the current path. This amplitude is substantiallyindependent of the current. Thus, the amplitudes of the signals M_(i)may be equal. With this configuration, each combination of three bitsM[2:0] is translated into a phase delay value proportional to thecorresponding digital value.

In principle, no insulation is generally required between the various Nand P zones in a same module. Indeed, the junction between each of thezones 44, 45 and the zone 40 is reverse biased, so no current flowsbetween the zones. The only current that may flow is that from the zone40 to the zone 42, between the terminals Vb and GND. However, if it isdesired to limit the extent of the depletion regions, insulating zonesmay be provided along the arms of islands 44, 45, as in FIG. 6B.

Many variations and modifications of the embodiments described hereinwill be apparent to the skilled person. The conductivity types of thevarious described zones correspond to a conductivity type of a nativesubstrate commonly used. The conductivity types may be interchangedwithout affecting the described operating principles. Phase shifterstructures having any number of modules arranged along a waveguide maybe designed. The waveguide may be ribbed or flat.

1-9. (canceled)
 10. A semiconductor electro-optical phase shiftercomprising: a substrate; an optical waveguide segment carried by saidsubstrate; first and second zones having opposite conductivity types andconfigured to form a first bipolar junction transverse to saidsubstrate; a dynamic control structure coupled to said first and secondzones and configured to reverse bias the first bipolar junction; and astatic control structure coupled to said dynamic control structure andconfigured to direct a quiescent current in said second zone and alignedwith the first bipolar junction.
 11. The semiconductor electro-opticalphase shifter according to claim 10, further comprising a third zoneelectrically coupled to and having a same conductivity type as saidfirst zone, said third zone defining, with said second zone, a secondbipolar junction aligned with said first bipolar junction.
 12. Thesemiconductor electro-optical phase shifter according to claim 10,further comprising a fourth zone having a same conductivity type as saidfirst zone and defining a third bipolar junction transverse to saidsubstrate, said third bipolar junction being configured to be forwardbiased by said static control structure.
 13. The semiconductorelectro-optical phase shifter according to claim 10, wherein said firstbipolar junction is perpendicular to an axis of said optical waveguidesegment.
 14. A phase shifter for an optical waveguide comprising: aplurality of semiconductor electro-optical phase shifter modulesarranged along the optical waveguide and each comprising a substrate, anoptical waveguide segment carried by said substrate, and first andsecond zones having opposite conductivity types and configured to form afirst bipolar junction transverse to said substrate; a dynamic controlstructure coupled to said first and second zones and configured toreverse bias each first bipolar junction; and a static control structurecoupled to said dynamic control structure and configured to direct aquiescent current in each second zone and aligned with each firstbipolar junction.
 15. The phase shifter according to claim 14, whereineach of said plurality of semiconductor electro-optical phase shiftermodules further comprises a third zone electrically coupled to andhaving a same conductivity type as said first zone, said third zonedefining, with said second zone, a second bipolar junction aligned withsaid first bipolar junction.
 16. The phase shifter according to claim14, wherein each of said plurality of semiconductor electro-opticalphase shifter modules further comprises a fourth zone having a sameconductivity type as said first zone and defining a third bipolarjunction transverse to said substrate, said third bipolar junction beingconfigured to be forward biased by said static control structure. 17.The phase shifter according to claim 14, wherein said first bipolarjunction is perpendicular to an axis of said optical waveguide segment.18. A phase shifter for an optical waveguide comprising: a plurality ofsemiconductor electro-optical phase shifter modules arranged along theoptical waveguide, each comprising a substrate, an optical waveguidesegment carried by said substrate, first and second zones havingopposite conductivity types and configured to form a first bipolarjunction transverse to said substrate, a dynamic control structurecoupled to said first and second zones and configured to reverse biasthe first bipolar junction, and a static control structure coupled tosaid dynamic control structure and configured to direct a quiescentcurrent in said second zone and aligned with the first bipolar junction;said dynamic and static control structures of each of said plurality ofsemiconductor electro-optical phase shifter modules being configured toproduce phase differences in geometric progression.
 19. The phaseshifter according to claim 18, wherein each of said plurality ofsemiconductor electro-optical phase shifter modules further comprises athird zone electrically coupled to and having a same conductivity typeas said first zone, said third zone defining, with said second zone, asecond bipolar junction aligned with said first bipolar junction. 20.The phase shifter according to claim 18, wherein each of said pluralityof semiconductor electro-optical phase shifter modules further comprisesa fourth zone having a same conductivity type as said first zone anddefining a third bipolar junction transverse to said substrate, saidthird bipolar junction being configured to be forward biased by saidstatic control structure.
 21. The phase shifter according to claim 18,wherein said first bipolar junction is perpendicular to an axis of saidoptical waveguide segment.
 22. A method of phase shifting an opticalwave in an optical waveguide provided in a semiconductor material on asubstrate and having a first bipolar junction in the optical waveguidetransverse to the substrate, the method comprising: producing aquiescent current flowing parallel to the first bipolar junction; andreverse biasing the first bipolar junction using a modulation signal.23. The method according to claim 22, further comprising: directing thequiescent current between the first bipolar junction and a secondbipolar junction aligned with the first bipolar junction; and reversebiasing the second bipolar junction using the modulation signal.
 24. Themethod according to claim 22, further comprising directing the quiescentcurrent through a third bipolar junction transverse to the substrate.